SI-N 140V 10A 100W 30MHz TO-3P
Type Designator: 2SC5198
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 140 V
Maximum Collector-Emitter Voltage |Vce|: 140 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 170 pF
Forward Current Transfer Ratio (hFE), MIN: 55
Package: TO3PN
- v/10 – Kr. 27,50
- v/100 – Kr. 15,00
SI-N 140V 10A 100W 30MHz TO-3P
Type Designator: 2SC5198
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 140 V
Maximum Collector-Emitter Voltage |Vce|: 140 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 170 pF
Forward Current Transfer Ratio (hFE), MIN: 55
Package: TO3PN