N-FET 25V 20mA 0.36W TO-92

Varenummer: 97-913
Varekode: 2N3819
Vægt: 1 g
94 stk. på lager
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    • TRANSISTOR, JFET, N, TO-92
    • Transistor Type: JFET

 

    • Breakdown Voltage Vbr: 25V

 

    • Zero Gate Voltage Drain Current Idss: 2mA to 20mA
    • Gate-Source Cutoff Voltage Vgs(off) Max: 8V
    • Power Dissipation Pd: 350mW

 

    • Transistor Case Style: TO-92

 

    • No. of Pins: 3
    • SVHC: No SVHC (20-Jun-2011)
    • Application Code: GPA

 

    • Current Idss Max: 20mA
    • Current Idss Min: 2mA
    • Current Ig: 10mA

 

    • Device Marking: 2N3819

 

    • Drain Source Voltage Vds: 25V
    • Forward Transconductance Gfs Max: 6.5mA/V
    • Full Power Rating Temperature: 25°C

 

    • Gfs Min: 2mA/V

 

    • No. of Transistors: 1
    • Operating Frequency Range: 1MHz to 500MHz
    • Package / Case: TO-92

 

    • Pin Configuration: k

 

    • Pin Format: k
    • Power Dissipation Pd: 350mW

 

    • Power Dissipation Ptot Max: 200mW

 

  • Termination Type: Through Hole
  • Transistor Polarity: N Channel
Inkl. moms
Kr. 29,00
  • v/10 – Kr. 25,00
  • v/25 – Kr. 20,00
  • v/100 – Kr. 12,50

N-FET 25V 20mA 0.36W TO-92

97-913
/ 2N3819
94 stk. på lager
    • TRANSISTOR, JFET, N, TO-92
    • Transistor Type: JFET

 

    • Breakdown Voltage Vbr: 25V

 

    • Zero Gate Voltage Drain Current Idss: 2mA to 20mA
    • Gate-Source Cutoff Voltage Vgs(off) Max: 8V
    • Power Dissipation Pd: 350mW

 

    • Transistor Case Style: TO-92

 

    • No. of Pins: 3
    • SVHC: No SVHC (20-Jun-2011)
    • Application Code: GPA

 

    • Current Idss Max: 20mA
    • Current Idss Min: 2mA
    • Current Ig: 10mA

 

    • Device Marking: 2N3819

 

    • Drain Source Voltage Vds: 25V
    • Forward Transconductance Gfs Max: 6.5mA/V
    • Full Power Rating Temperature: 25°C

 

    • Gfs Min: 2mA/V

 

    • No. of Transistors: 1
    • Operating Frequency Range: 1MHz to 500MHz
    • Package / Case: TO-92

 

    • Pin Configuration: k

 

    • Pin Format: k
    • Power Dissipation Pd: 350mW

 

    • Power Dissipation Ptot Max: 200mW

 

  • Termination Type: Through Hole
  • Transistor Polarity: N Channel