N-Ch 800V 4A 100W 3,3R TO220
Varenummer:
77-816
Varekode: STP4NB80
11 stk.
på lager
Bestil inden kl. 14 i dag for afsendelse i dag
Specifikationer
| Komponenthus | TO220 |
|---|---|
| Transistor polaritet | N-Ch |
| Produkt | MOSFET |
| Drain-Source spænding, max | 800 V |
| Continuous drain current, max | 4 A |
| Drain-Source On-modstand, Rds(on) | 3.3 Ω |
| Effekt, max. | 100 W |
| Manufacturer: | STMicroelectronics | |
| Product Category: | MOSFETs | |
| Delivery Restrictions: | Mouser does not presently sell this product in your region. | |
| RoHS: | ||
| Technology: | Si | |
| Mounting Style: | Through Hole | |
| Package/Case: | TO-220-3 | |
| Transistor Polarity: | N-Channel | |
| Number of Channels: | 1 Channel | |
| Vds - Drain-Source Breakdown Voltage: | 800 V | |
| Id - Continuous Drain Current: | 4 A | |
| Rds On - Drain-Source Resistance: | 3.3 Ohms | |
| Vgs - Gate-Source Voltage: | 30 V | |
| Minimum Operating Temperature: | - 65 C | |
| Maximum Operating Temperature: | + 150 C | |
| Pd - Power Dissipation: | 100 W | |
| Channel Mode: | Enhancement | |
| Packaging: | Tube | |
| Brand: | STMicroelectronics | |
| Configuration: | Single | |
| Fall Time: | 9 ns | |
| Product Type: | MOSFETs | |
| Rise Time: | 8 ns | |
| Series: | STP4NB80 | |
| 50 | ||
| Subcategory: | Transistors | |
| Transistor Type: | 1 N-Channel | |
| Typical Turn-On Delay Time: | 14 ns | |
| Unit Weight: | 2 g |
Produktfiler
N-Ch 800V 4A 100W 3,3R TO220
77-816
/ STP4NB80
11 stk.
på lager
Bestil inden kl. 14 i dag for afsendelse i dag
Kontakt os for at få oplyst leveringstid
Specifikationer
- Komponenthus TO220
- Transistor polaritet N-Ch
- Produkt MOSFET
- Drain-Source spænding, max 800 V
- Continuous drain current, max 4 A
- Drain-Source On-modstand, Rds(on) 3.3 Ω
- Effekt, max. 100 W
| Manufacturer: | STMicroelectronics | |
| Product Category: | MOSFETs | |
| Delivery Restrictions: | Mouser does not presently sell this product in your region. | |
| RoHS: | ||
| Technology: | Si | |
| Mounting Style: | Through Hole | |
| Package/Case: | TO-220-3 | |
| Transistor Polarity: | N-Channel | |
| Number of Channels: | 1 Channel | |
| Vds - Drain-Source Breakdown Voltage: | 800 V | |
| Id - Continuous Drain Current: | 4 A | |
| Rds On - Drain-Source Resistance: | 3.3 Ohms | |
| Vgs - Gate-Source Voltage: | 30 V | |
| Minimum Operating Temperature: | - 65 C | |
| Maximum Operating Temperature: | + 150 C | |
| Pd - Power Dissipation: | 100 W | |
| Channel Mode: | Enhancement | |
| Packaging: | Tube | |
| Brand: | STMicroelectronics | |
| Configuration: | Single | |
| Fall Time: | 9 ns | |
| Product Type: | MOSFETs | |
| Rise Time: | 8 ns | |
| Series: | STP4NB80 | |
| 50 | ||
| Subcategory: | Transistors | |
| Transistor Type: | 1 N-Channel | |
| Typical Turn-On Delay Time: | 14 ns | |
| Unit Weight: | 2 g |
Produktfiler