Transistor MOSFET N-CH 60V 0,5A 0,83W TO92
The BS170 is an N-channel enhancement-mode MOSFET designed for low-power switching and amplification applications. It features a high input impedance and fast switching performance due to its MOS gate structure. The device is housed in a TO92 package, making it suitable for compact and through-hole designs. The BS170 typically supports a drain-source voltage up to 60V and a continuous drain current of approximately 500mA, depending on thermal conditions. It offers low gate threshold voltage, allowing direct drive from logic-level signals. Common applications include signal switching, small motor control, LED drivers, general purpose analog and digital circuits.
Type Designator: BS170
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Pd ⓘ - Maximum Power Dissipation: 0.83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 3 V
RDSonⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
Package: TO92
- v/10 – Kr. 3,40
- v/25 – Kr. 2,46
- v/100 – Kr. 1,74
Transistor MOSFET N-CH 60V 0,5A 0,83W TO92
The BS170 is an N-channel enhancement-mode MOSFET designed for low-power switching and amplification applications. It features a high input impedance and fast switching performance due to its MOS gate structure. The device is housed in a TO92 package, making it suitable for compact and through-hole designs. The BS170 typically supports a drain-source voltage up to 60V and a continuous drain current of approximately 500mA, depending on thermal conditions. It offers low gate threshold voltage, allowing direct drive from logic-level signals. Common applications include signal switching, small motor control, LED drivers, general purpose analog and digital circuits.
Type Designator: BS170
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Pd ⓘ - Maximum Power Dissipation: 0.83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 3 V
RDSonⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
Package: TO92