N-FET 30V 25mA 0,3W 12-25mA TO92

Varenummer: 77-713
Varekode: BF245C
Vægt: 2 g
4 stk. på lager
Bestil inden kl. 14 i dag for afsendelse i dag
Yderligere 20 stk. kan skaffes fredag d. 20/11
Vis lignende produkter i kategorien "B.."
Produktoplysninger
  • TRANSISTOR, JFET, N, TO-92
  • Transistor Type: JFET
  • Breakdown Voltage Vbr: -30V
  • Zero Gate Voltage Drain Current Idss: 12mA to 25mA
  • Gate-Source Cutoff Voltage Vgs(off) Max: 8V
  • Power Dissipation Pd: 350mW
  • Transistor Case Style: TO-92
  • No. of Pins: 3
  • SVHC: No SVHC (18-Jun-2012)
  • Application Code: HFA
  • Current Idss Max: 25mA
  • Current Idss Min: 12mA
  • Current Ig: 10mA
  • Device Marking: BF245C
  • Drain Source Voltage Vds: 30V
  • Forward Transconductance Gfs Max: 6.5mA/V
  • Full Power Rating Temperature: 25°C
  • Gfs Min: 3mA/V
  • No. of Transistors: 1
  • Operating Frequency Range: 1MHz to 500MHz
  • Package / Case: TO-92
  • Pin Configuration: r
  • Pin Format: r
  • Power Dissipation Pd: 350mW
  • Power Dissipation Ptot Max: 350mW
  • Termination Type: Through Hole
  • Transistor Polarity: N Channel
Inkl. moms
Kr. 25,00
  • v/10 – Kr. 22,50
  • v/100 – Kr. 20,00

N-FET 30V 25mA 0,3W 12-25mA TO92

77-713
/ BF245C
4 stk. på lager
Bestil inden kl. 14 i dag for afsendelse i dag
Ved bestilling nu, får vi dem hjem fredag d. 20/11
Produktoplysninger
  • TRANSISTOR, JFET, N, TO-92
  • Transistor Type: JFET
  • Breakdown Voltage Vbr: -30V
  • Zero Gate Voltage Drain Current Idss: 12mA to 25mA
  • Gate-Source Cutoff Voltage Vgs(off) Max: 8V
  • Power Dissipation Pd: 350mW
  • Transistor Case Style: TO-92
  • No. of Pins: 3
  • SVHC: No SVHC (18-Jun-2012)
  • Application Code: HFA
  • Current Idss Max: 25mA
  • Current Idss Min: 12mA
  • Current Ig: 10mA
  • Device Marking: BF245C
  • Drain Source Voltage Vds: 30V
  • Forward Transconductance Gfs Max: 6.5mA/V
  • Full Power Rating Temperature: 25°C
  • Gfs Min: 3mA/V
  • No. of Transistors: 1
  • Operating Frequency Range: 1MHz to 500MHz
  • Package / Case: TO-92
  • Pin Configuration: r
  • Pin Format: r
  • Power Dissipation Pd: 350mW
  • Power Dissipation Ptot Max: 350mW
  • Termination Type: Through Hole
  • Transistor Polarity: N Channel