PNP 100V 10A 80W TO218
Type Designator: BD246C
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 115 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB:
Package: TO218
PNP 100V 10A 80W TO218
Type Designator: BD246C
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 115 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB:
Package: TO218