PNP 70V 10A 80W TO218
Type Designator: BD246C
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc):
80 W
Maximum Collector-Base Voltage |Vcb|: 70
V
Maximum Collector-Emitter Voltage |Vce|:
100 V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 10
A
Max. Operating Junction Temperature (Tj):
150 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN:
30
Noise Figure, dB:
Package:TO218
- v/10 – Kr. 20,00
PNP 70V 10A 80W TO218
Type Designator: BD246C
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc):
80 W
Maximum Collector-Base Voltage |Vcb|: 70
V
Maximum Collector-Emitter Voltage |Vce|:
100 V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 10
A
Max. Operating Junction Temperature (Tj):
150 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN:
30
Noise Figure, dB:
Package:TO218