N-Ch. MOSFET 400V 14A 150W 0,3R TO-3
Varenummer:
154-367
Varekode: IRF350
13 stk.
på lager
|
Manufacturer
|
Infineon (IRF) | |
|
Type of transistor
|
N-MOSFET | |
|
Technology
|
HEXFET® | |
|
Polarisation
|
unipolar | |
|
Drain-source voltage
|
400V | |
|
Drain current
|
14A | |
|
Power dissipation
|
150W | |
|
Case
|
TO3 | |
|
Mounting
|
THT | |
|
Kind of package
|
tube | |
|
Kind of channel
|
enhanced |
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 14 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 110(max) nC
trⓘ - Rise Time: 190(max) nS
Cossⓘ - Output Capacitance: 680 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: TO3
Inkl. moms
Kr. 37,50
- v/10 – Kr. 31,25
Produktfiler
N-Ch. MOSFET 400V 14A 150W 0,3R TO-3
154-367
/ IRF350
13 stk.
på lager
|
Manufacturer
|
Infineon (IRF) | |
|
Type of transistor
|
N-MOSFET | |
|
Technology
|
HEXFET® | |
|
Polarisation
|
unipolar | |
|
Drain-source voltage
|
400V | |
|
Drain current
|
14A | |
|
Power dissipation
|
150W | |
|
Case
|
TO3 | |
|
Mounting
|
THT | |
|
Kind of package
|
tube | |
|
Kind of channel
|
enhanced |
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 14 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 110(max) nC
trⓘ - Rise Time: 190(max) nS
Cossⓘ - Output Capacitance: 680 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: TO3
Produktfiler