PNP 200V 16A 250W TO-3
200V 16A 250W TO3
| Motorola | |
| Kind Of Product | Transistor |
| Sort | SI-P |
| Housing | TO3 |
| Voltage | 200 V |
| Current | 16 A |
| Power | 250 mW |
| Frequency | 4 MHz |
Type Designator: MJ15027
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 250 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 16 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 4 MHz
Collector Capacitance (Cc): 500 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB:
Package: TO3
- v/5 – Kr. 36,25
- v/10 – Kr. 35,00
- v/100 – Kr. 32,50
PNP 200V 16A 250W TO-3
200V 16A 250W TO3
| Motorola | |
| Kind Of Product | Transistor |
| Sort | SI-P |
| Housing | TO3 |
| Voltage | 200 V |
| Current | 16 A |
| Power | 250 mW |
| Frequency | 4 MHz |
Type Designator: MJ15027
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 250 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 16 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 4 MHz
Collector Capacitance (Cc): 500 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB:
Package: TO3