N-Ch 60V 10A 43W 0,2R TO220AB
Type Designator: IRFZ14
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 43 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 10 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 11(max) nC
Rise Time (tr): 50 nS
Drain-Source Capacitance (Cd): 160 pF
Maximum Drain-Source On-State Resistance (Rds): 0.2 Ohm
Package: TO220
N-Ch 60V 10A 43W 0,2R TO220AB
Type Designator: IRFZ14
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 43 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 10 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 11(max) nC
Rise Time (tr): 50 nS
Drain-Source Capacitance (Cd): 160 pF
Maximum Drain-Source On-State Resistance (Rds): 0.2 Ohm
Package: TO220