N-Ch 500V 9,5A 125W 0,6R TO-218
Type Designator: BUZ330
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 125 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 9.5 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 95 nS
Drain-Source Capacitance (Cd): 220 pF
Maximum Drain-Source On-State Resistance (Rds): 0.6 Ohm
Package: TO-218
- v/10 – Kr. 45,00
N-Ch 500V 9,5A 125W 0,6R TO-218
Type Designator: BUZ330
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 125 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 9.5 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 95 nS
Drain-Source Capacitance (Cd): 220 pF
Maximum Drain-Source On-State Resistance (Rds): 0.6 Ohm
Package: TO-218