TRANSISTOR 13H TO-202
Type Designator: BD825-10
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 8 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 125 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO202
TRANSISTOR 13H TO-202
Type Designator: BD825-10
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 8 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 125 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO202