NPN 100V 8A 83W TO218
Type Designator: 2N5037
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 83 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 0.8 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO218
NPN 100V 8A 83W TO218
Type Designator: 2N5037
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 83 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 0.8 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO218