SI-N 40V 0,7A 0,5W TO-92 Excl. køleplade
Type Designator: 2SD261
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 0.5
Maximum collector-base voltage |Ucb|, V: 40
Maximum collector-emitter voltage |Uce|, V: 30
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 0.7
Maximum junction temperature (Tj), °C: 125
Transition frequency (ft), MHz: 160
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 40
Noise Figure, dB: -
Package of 2SD261 transistor: TO92
SI-N 40V 0,7A 0,5W TO-92 Excl. køleplade
Type Designator: 2SD261
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 0.5
Maximum collector-base voltage |Ucb|, V: 40
Maximum collector-emitter voltage |Uce|, V: 30
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 0.7
Maximum junction temperature (Tj), °C: 125
Transition frequency (ft), MHz: 160
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 40
Noise Figure, dB: -
Package of 2SD261 transistor: TO92