P-Ch. MOSFET 100V 25A 150W 0,15R TO-218AC
Type Designator: RFH25P10
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 150 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 25 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 165 nS
Drain-Source Capacitance (Cd): 1500 pF
Maximum Drain-Source On-State Resistance (Rds): 0.15 Ohm
Package: TO-218AC
P-Ch. MOSFET 100V 25A 150W 0,15R TO-218AC
Type Designator: RFH25P10
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 150 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 25 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 165 nS
Drain-Source Capacitance (Cd): 1500 pF
Maximum Drain-Source On-State Resistance (Rds): 0.15 Ohm
Package: TO-218AC