MOSFET 400V 5A 60W TO-220
Type Designator: RCP10N40 📄
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 60 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
|Ic| ⓘ - Maximum Collector Current: 5 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4.5 V @25℃
tr ⓘ - Rise Time, typ: 100 nS
Coesⓘ - Output Capacitance, typ: 800pF pF
Package: TO220
- v/10 – Kr. 20,00
MOSFET 400V 5A 60W TO-220
Type Designator: RCP10N40 📄
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 60 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
|Ic| ⓘ - Maximum Collector Current: 5 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4.5 V @25℃
tr ⓘ - Rise Time, typ: 100 nS
Coesⓘ - Output Capacitance, typ: 800pF pF
Package: TO220