N-Ch 500V 2,5A 50W 3,0R TO-204AA
IRF420 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF420
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 50 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 2.5 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 210 nC
Rise Time (tr): 12 nS
Drain-Source Capacitance (Cd): 75 pF
Maximum Drain-Source On-State Resistance (Rds): 3 Ohm
Package: TO204AA
- v/10 – Kr. 25,00
- v/50 – Kr. 20,00
N-Ch 500V 2,5A 50W 3,0R TO-204AA
IRF420 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF420
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 50 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 2.5 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 210 nC
Rise Time (tr): 12 nS
Drain-Source Capacitance (Cd): 75 pF
Maximum Drain-Source On-State Resistance (Rds): 3 Ohm
Package: TO204AA