NPN 400V 7A 125W TO-3

Varenummer: 142-678
Varekode: RCA423
15 stk. på lager
Bestil inden kl. 14 i dag for afsendelse i dag
Vis lignende produkter i kategorien "Effekt-transistorer"
The RCA423 is a NPN epitaxial silicon Power Transistor utilizing a multiple-emitter site structure for switching and linear applications. It features high breakdown-voltage ratings and low saturation-voltage values, making it especially suitable for use in inverters, deflection circuits, switching regulators, high-voltage bridge amplifiers, ignition circuits and other high-voltage switching applications.
  • High voltage
  • High power
  • Maximum safe-area-of-operation curves
  • Hermetic package
  • RCA423 Datasheet, Equivalent, Cross Reference Search

    Type Designator: RCA423

    Material of Transistor: Si

    Polarity: NPN

    Maximum Collector Power Dissipation (Pc): 125 W

    Maximum Collector-Base Voltage |Vcb|: 400 V

    Maximum Collector-Emitter Voltage |Vce|: 325 V

    Maximum Emitter-Base Voltage |Veb|: 5 V

    Maximum Collector Current |Ic max|: 7 A

    Max. Operating Junction Temperature (Tj): 150 °C

    Transition Frequency (ft): 2 MHz

    Forward Current Transfer Ratio (hFE), MIN: 10

    Noise Figure, dB: -

    Package: TO3

Inkl. moms
Kr. 30,00
  • v/10 – Kr. 25,00
  • v/25 – Kr. 20,00

NPN 400V 7A 125W TO-3

142-678
/ RCA423
15 stk. på lager
Bestil inden kl. 14 i dag for afsendelse i dag
Kontakt os for at få oplyst leveringstid
The RCA423 is a NPN epitaxial silicon Power Transistor utilizing a multiple-emitter site structure for switching and linear applications. It features high breakdown-voltage ratings and low saturation-voltage values, making it especially suitable for use in inverters, deflection circuits, switching regulators, high-voltage bridge amplifiers, ignition circuits and other high-voltage switching applications.
  • High voltage
  • High power
  • Maximum safe-area-of-operation curves
  • Hermetic package
  • RCA423 Datasheet, Equivalent, Cross Reference Search

    Type Designator: RCA423

    Material of Transistor: Si

    Polarity: NPN

    Maximum Collector Power Dissipation (Pc): 125 W

    Maximum Collector-Base Voltage |Vcb|: 400 V

    Maximum Collector-Emitter Voltage |Vce|: 325 V

    Maximum Emitter-Base Voltage |Veb|: 5 V

    Maximum Collector Current |Ic max|: 7 A

    Max. Operating Junction Temperature (Tj): 150 °C

    Transition Frequency (ft): 2 MHz

    Forward Current Transfer Ratio (hFE), MIN: 10

    Noise Figure, dB: -

    Package: TO3