P-Ch 100V 7,7A 42W 0,3R TO220-Fullpak
Varenummer:
141-416
Varekode: IRFI9530GPBC
3 stk.
på lager
Bestil inden kl. 14 i dag for afsendelse i dag
Yderligere 350 stk. kan skaffes tirsdag d. 27/10
| Kanaltype | P | |
| Drain-strøm kontinuerlig maks. | 7,7 A | |
| Drain source spænding maks. | 100 V | |
| Drain source modstand maks. | 300 mΩ | |
| Mindste tærskelspænding for port | 2V | |
| Gate source spænding maks. | -20 V, +20 V | |
| Kapslingstype | TO-220FP | |
| Monteringstype | Hulmontering | |
| Benantal | 3 | |
| Transistorkonfiguration | Enkelt | |
| Kanalform | Enhancement | |
| Kategori | Effekt MOSFET | |
| Effektafsættelse maks. | 42 W | |
| Driftstemperatur min. | -55 °C | |
| Gate-ladning ved Vgs typisk | 38 nC ved 10 V | |
| Driftstemperatur maks. | +175 °C | |
| Højde | 9.8mm | |
| Indgangskapacitet ved Vds typisk | 860 pF ved 25 V | |
| Antal elementer per chip | 1 | |
| Transistormateriale | Si | |
| Tænd-forsinkelsestid typisk | 12 ns | |
| Slukke-forsinkelsestid typisk | 31 ns |
The IRFI9530GPBF is a third generation P-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The FULLPAK eliminates the need for additional insulating hardware. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heat sink. The isolation is equivalent to using a 100 micron mica barrier with standard product. The FULLPAK is mounted to a heat sink using a single clip or by a single screw fixing.
Inkl. moms
Kr. 24,25
- v/10 – Kr. 17,69
- v/25 – Kr. 13,91
- v/100 – Kr. 11,38
Produktfiler
P-Ch 100V 7,7A 42W 0,3R TO220-Fullpak
141-416
/ IRFI9530GPBC
3 stk.
på lager
Bestil inden kl. 14 i dag for afsendelse i dag
Ved bestilling nu, får vi dem hjem tirsdag d. 27/10
| Kanaltype | P | |
| Drain-strøm kontinuerlig maks. | 7,7 A | |
| Drain source spænding maks. | 100 V | |
| Drain source modstand maks. | 300 mΩ | |
| Mindste tærskelspænding for port | 2V | |
| Gate source spænding maks. | -20 V, +20 V | |
| Kapslingstype | TO-220FP | |
| Monteringstype | Hulmontering | |
| Benantal | 3 | |
| Transistorkonfiguration | Enkelt | |
| Kanalform | Enhancement | |
| Kategori | Effekt MOSFET | |
| Effektafsættelse maks. | 42 W | |
| Driftstemperatur min. | -55 °C | |
| Gate-ladning ved Vgs typisk | 38 nC ved 10 V | |
| Driftstemperatur maks. | +175 °C | |
| Højde | 9.8mm | |
| Indgangskapacitet ved Vds typisk | 860 pF ved 25 V | |
| Antal elementer per chip | 1 | |
| Transistormateriale | Si | |
| Tænd-forsinkelsestid typisk | 12 ns | |
| Slukke-forsinkelsestid typisk | 31 ns |
The IRFI9530GPBF is a third generation P-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The FULLPAK eliminates the need for additional insulating hardware. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heat sink. The isolation is equivalent to using a 100 micron mica barrier with standard product. The FULLPAK is mounted to a heat sink using a single clip or by a single screw fixing.
Produktfiler