N-Ch 200V 18A 125W 0,18R TO220AB
IRF641 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF641
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 125 W
Maximum Drain-Source Voltage |Vds|: 150 V
Maximum Drain Current |Id|: 18 A
Maximum Junction Temperature (Tj): 150 °C
Maximum Drain-Source On-State Resistance (Rds): 0.18 Ohm
Package: TO220
- v/10 – Kr. 18,43
N-Ch 200V 18A 125W 0,18R TO220AB
IRF641 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF641
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 125 W
Maximum Drain-Source Voltage |Vds|: 150 V
Maximum Drain Current |Id|: 18 A
Maximum Junction Temperature (Tj): 150 °C
Maximum Drain-Source On-State Resistance (Rds): 0.18 Ohm
Package: TO220