12A P-N-P monolithic darlington power transistor TO-3
2N6051 Transistor (IC) Datasheet. Cross Reference Search.
2N6051 Equivalent
Type Designator: 2N6051
Material of transistor: Si
Polarity: PNP
Maximum collector power dissipation (Pc), W: 150
Maximum collector-base voltage |Ucb|, V: 80
Maximum collector-emitter voltage |Uce|, V: 80
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 12
Maksimalna temperatura (Tj), °C: 200
Transition frequency (ft), MHz: 4
Collector capacitance (Cc), pF: 500
Forward current transfer ratio (hFE), min: 750
Noise Figure, dB: -
Package of 2N6051 transistor: TO3
12A P-N-P monolithic darlington power transistor TO-3
2N6051 Transistor (IC) Datasheet. Cross Reference Search.
2N6051 Equivalent
Type Designator: 2N6051
Material of transistor: Si
Polarity: PNP
Maximum collector power dissipation (Pc), W: 150
Maximum collector-base voltage |Ucb|, V: 80
Maximum collector-emitter voltage |Uce|, V: 80
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 12
Maksimalna temperatura (Tj), °C: 200
Transition frequency (ft), MHz: 4
Collector capacitance (Cc), pF: 500
Forward current transfer ratio (hFE), min: 750
Noise Figure, dB: -
Package of 2N6051 transistor: TO3