SI-N 200V 6A 40W 8MHZ TO-220
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 40
Maximum collector-base voltage |Ucb|, V: 200
Maximum collector-emitter voltage |Uce|, V: 90
Maximum emitter-base voltage |Ueb|, V: 7
Maximum collector current |Ic max|, A: 6
Maksimalna temperatura (Tj), °C: 150
Transition frequency (ft), MHz: 8
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 20
Noise Figure, dB: -
Package of 2SD823 transistor: TO220
SI-N 200V 6A 40W 8MHZ TO-220
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 40
Maximum collector-base voltage |Ucb|, V: 200
Maximum collector-emitter voltage |Uce|, V: 90
Maximum emitter-base voltage |Ueb|, V: 7
Maximum collector current |Ic max|, A: 6
Maksimalna temperatura (Tj), °C: 150
Transition frequency (ft), MHz: 8
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 20
Noise Figure, dB: -
Package of 2SD823 transistor: TO220