NPN 50V 0,1A 0,3W TO-92
Type Designator: BC414B
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 0.3
Maximum collector-base voltage |Ucb|, V: 50
Maximum collector-emitter voltage |Uce|, V: 45
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 0.1
Maksimalna temperatura (Tj), °C: 150
Transition frequency (ft), MHz: 250
Collector capacitance (Cc), pF: 5
Forward current transfer ratio (hFE), min: 180
Noise Figure, dB: -
- v/1 – Kr. 10,00
NPN 50V 0,1A 0,3W TO-92
Type Designator: BC414B
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 0.3
Maximum collector-base voltage |Ucb|, V: 50
Maximum collector-emitter voltage |Uce|, V: 45
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 0.1
Maksimalna temperatura (Tj), °C: 150
Transition frequency (ft), MHz: 250
Collector capacitance (Cc), pF: 5
Forward current transfer ratio (hFE), min: 180
Noise Figure, dB: -