GE-P 45V 0.5A 0.225W TO-5
Type Designator: 2N526
Material of transistor: Ge
Polarity: PNP
Maximum collector power dissipation (Pc), W: 0.225
Maximum collector-base voltage |Ucb|, V: 45
Maximum collector-emitter voltage |Uce|, V: 30
Maximum emitter-base voltage |Ueb|, V: 15
Maximum collector current |Ic max|, A: 0.5
Maximum junction temperature (Tj), °C: 100
Transition frequency (ft), MHz: 1
Collector capacitance (Cc), pF: 36
Forward current transfer ratio (hFE), min: 65
Noise Figure, dB: -
Package of 2N526 transistor: TO5
GE-P 45V 0.5A 0.225W TO-5
Type Designator: 2N526
Material of transistor: Ge
Polarity: PNP
Maximum collector power dissipation (Pc), W: 0.225
Maximum collector-base voltage |Ucb|, V: 45
Maximum collector-emitter voltage |Uce|, V: 30
Maximum emitter-base voltage |Ueb|, V: 15
Maximum collector current |Ic max|, A: 0.5
Maximum junction temperature (Tj), °C: 100
Transition frequency (ft), MHz: 1
Collector capacitance (Cc), pF: 36
Forward current transfer ratio (hFE), min: 65
Noise Figure, dB: -
Package of 2N526 transistor: TO5