N-FET 800V 5A 125W TO-3P
Type Designator: 2SK2038
Type of 2SK2038 transistor: MOSFET
Type of control channel: N -Channel
Maximum power dissipation (Pd), W: 125
Maximum drain-source voltage |Uds|, V: 800
Maximum gate-source voltage |Ugs|, V: 30
Maximum drain current |Id|, A: 5
Maximum junction temperature (Tj), °C: 150
Rise Time of 2SK2038 transistor (tr), nS: 30
Drain-source Capacitance (Cd), pF: 110
Maximum drain-source on-state resistance (Rds), Ohm: 1.8
Package: TO-3P
N-FET 800V 5A 125W TO-3P
Type Designator: 2SK2038
Type of 2SK2038 transistor: MOSFET
Type of control channel: N -Channel
Maximum power dissipation (Pd), W: 125
Maximum drain-source voltage |Uds|, V: 800
Maximum gate-source voltage |Ugs|, V: 30
Maximum drain current |Id|, A: 5
Maximum junction temperature (Tj), °C: 150
Rise Time of 2SK2038 transistor (tr), nS: 30
Drain-source Capacitance (Cd), pF: 110
Maximum drain-source on-state resistance (Rds), Ohm: 1.8
Package: TO-3P