N-FET 900V 7A 120W TO-3P
Type Designator: 2SK1502
Type of 2SK1502 transistor: MOSFET
Type of control channel: N -Channel
Maximum power dissipation (Pd), W: 120
Maximum drain-source voltage |Uds|, V: 900
Maximum gate-source voltage |Ugs|, V:
Maximum drain current |Id|, A: 7.0
Maximum junction temperature (Tj), °C: 150
Rise Time of 2SK1502 transistor (tr), nS:
Drain-source Capacitance (Cd), pF:
Maximum drain-source on-state resistance (Rds), Ohm: 1.7
Package: TO-3P
N-FET 900V 7A 120W TO-3P
Type Designator: 2SK1502
Type of 2SK1502 transistor: MOSFET
Type of control channel: N -Channel
Maximum power dissipation (Pd), W: 120
Maximum drain-source voltage |Uds|, V: 900
Maximum gate-source voltage |Ugs|, V:
Maximum drain current |Id|, A: 7.0
Maximum junction temperature (Tj), °C: 150
Rise Time of 2SK1502 transistor (tr), nS:
Drain-source Capacitance (Cd), pF:
Maximum drain-source on-state resistance (Rds), Ohm: 1.7
Package: TO-3P