N-FET 500V 13A 85W TO-3PBL
Type Designator: 2SK1181
Type of 2SK1181 transistor: MOSFET
Type of control channel: N -Channel
Maximum power dissipation (Pd), W: 85
Maximum drain-source voltage |Uds|, V: 500
Maximum gate-source voltage |Ugs|, V:
Maximum drain current |Id|, A: 13
Maximum junction temperature (Tj), °C: 150
Rise Time of 2SK1181 transistor (tr), nS:
Drain-source Capacitance (Cd), pF: 2700
Maximum drain-source on-state resistance (Rds), Ohm: 0.4
Package: TO-3PBL
N-FET 500V 13A 85W TO-3PBL
Type Designator: 2SK1181
Type of 2SK1181 transistor: MOSFET
Type of control channel: N -Channel
Maximum power dissipation (Pd), W: 85
Maximum drain-source voltage |Uds|, V: 500
Maximum gate-source voltage |Ugs|, V:
Maximum drain current |Id|, A: 13
Maximum junction temperature (Tj), °C: 150
Rise Time of 2SK1181 transistor (tr), nS:
Drain-source Capacitance (Cd), pF: 2700
Maximum drain-source on-state resistance (Rds), Ohm: 0.4
Package: TO-3PBL