N-FET 1800V 1A 25W TO-220F
Type Designator: 2SD947
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 25
Maximum collector-base voltage |Ucb|, V: 1800
Maximum collector-emitter voltage |Uce|, V: 0
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 1
Maximum junction temperature (Tj), °C: 130
Transition frequency (ft), MHz:
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 4
Noise Figure, dB: -
Package of 2SD947 transistor: TO-220F
N-FET 1800V 1A 25W TO-220F
Type Designator: 2SD947
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 25
Maximum collector-base voltage |Ucb|, V: 1800
Maximum collector-emitter voltage |Uce|, V: 0
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 1
Maximum junction temperature (Tj), °C: 130
Transition frequency (ft), MHz:
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 4
Noise Figure, dB: -
Package of 2SD947 transistor: TO-220F