N-FET 60V 2A 35W TO-220F
Type Designator: 2SK817
Type of 2SK817 transistor: MOSFET
Type of control channel: N -Channel
Maximum power dissipation (Pd), W: 35
Maximum drain-source voltage |Uds|, V: 60
Maximum gate-source voltage |Ugs|, V: 20
Maximum drain current |Id|, A: 2
Maximum junction temperature (Tj), °C: 150
Rise Time of 2SK817 transistor (tr), nS: 20
Drain-source Capacitance (Cd), pF: 800
Maximum drain-source on-state resistance (Rds), Ohm: 0.06
Package: TO-220F
N-FET 60V 2A 35W TO-220F
Type Designator: 2SK817
Type of 2SK817 transistor: MOSFET
Type of control channel: N -Channel
Maximum power dissipation (Pd), W: 35
Maximum drain-source voltage |Uds|, V: 60
Maximum gate-source voltage |Ugs|, V: 20
Maximum drain current |Id|, A: 2
Maximum junction temperature (Tj), °C: 150
Rise Time of 2SK817 transistor (tr), nS: 20
Drain-source Capacitance (Cd), pF: 800
Maximum drain-source on-state resistance (Rds), Ohm: 0.06
Package: TO-220F