N-FET 500V 10A 100W TO-3P
Type Designator: 2SK724
Type of 2SK724 transistor: MOSFET
Type of control channel: N -Channel
Maximum power dissipation (Pd), W: 100
Maximum drain-source voltage |Uds|, V: 500
Maximum gate-source voltage |Ugs|, V: 20
Maximum drain current |Id|, A: 10
Maximum junction temperature (Tj), °C: 150
Rise Time of 2SK724 transistor (tr), nS:
Drain-source Capacitance (Cd), pF:
Maximum drain-source on-state resistance (Rds), Ohm: 0.67
Package: TO3P
N-FET 500V 10A 100W TO-3P
Type Designator: 2SK724
Type of 2SK724 transistor: MOSFET
Type of control channel: N -Channel
Maximum power dissipation (Pd), W: 100
Maximum drain-source voltage |Uds|, V: 500
Maximum gate-source voltage |Ugs|, V: 20
Maximum drain current |Id|, A: 10
Maximum junction temperature (Tj), °C: 150
Rise Time of 2SK724 transistor (tr), nS:
Drain-source Capacitance (Cd), pF:
Maximum drain-source on-state resistance (Rds), Ohm: 0.67
Package: TO3P