N-FET 50V 0.2A 0.6W TO-92
Type Designator: 2SK583
Type of 2SK583 transistor: MOSFET
Type of control channel: N -Channel
Maximum power dissipation (Pd), W: 0.6
Maximum drain-source voltage |Uds|, V: 50
Maximum gate-source voltage |Ugs|, V: 12
Maximum drain current |Id|, A: 0.2
Maximum junction temperature (Tj), °C: 125
Rise Time of 2SK583 transistor (tr), nS:
Drain-source Capacitance (Cd), pF: 6
Maximum drain-source on-state resistance (Rds), Ohm: 20
Package: TO-92_SC-43
N-FET 50V 0.2A 0.6W TO-92
Type Designator: 2SK583
Type of 2SK583 transistor: MOSFET
Type of control channel: N -Channel
Maximum power dissipation (Pd), W: 0.6
Maximum drain-source voltage |Uds|, V: 50
Maximum gate-source voltage |Ugs|, V: 12
Maximum drain current |Id|, A: 0.2
Maximum junction temperature (Tj), °C: 125
Rise Time of 2SK583 transistor (tr), nS:
Drain-source Capacitance (Cd), pF: 6
Maximum drain-source on-state resistance (Rds), Ohm: 20
Package: TO-92_SC-43