N-FET 800V 3A 80W TO-3P
Type Designator: 2SK415
Type of 2SK415 transistor: MOSFET
Type of control channel: N -Channel
Maximum power dissipation (Pd), W: 80
Maximum drain-source voltage |Uds|, V: 800
Maximum gate-source voltage |Ugs|, V: 20
Maximum drain current |Id|, A: 3
Maximum junction temperature (Tj), °C: 150
Rise Time of 2SK415 transistor (tr), nS: 35
Drain-source Capacitance (Cd), pF: 120
Maximum drain-source on-state resistance (Rds), Ohm: 5
Package: TO-3P
N-FET 800V 3A 80W TO-3P
Type Designator: 2SK415
Type of 2SK415 transistor: MOSFET
Type of control channel: N -Channel
Maximum power dissipation (Pd), W: 80
Maximum drain-source voltage |Uds|, V: 800
Maximum gate-source voltage |Ugs|, V: 20
Maximum drain current |Id|, A: 3
Maximum junction temperature (Tj), °C: 150
Rise Time of 2SK415 transistor (tr), nS: 35
Drain-source Capacitance (Cd), pF: 120
Maximum drain-source on-state resistance (Rds), Ohm: 5
Package: TO-3P