N-FET 140V 8A 100W TO-3P
Type Designator: 2SK413
Type of 2SK413 transistor: MOSFET
Type of control channel: N -Channel
Maximum power dissipation (Pd), W: 100
Maximum drain-source voltage |Uds|, V: 140
Maximum gate-source voltage |Ugs|, V: 20
Maximum drain current |Id|, A: 8
Maximum junction temperature (Tj), °C: 150
Rise Time of 2SK413 transistor (tr), nS: 35
Drain-source Capacitance (Cd), pF: 330
Maximum drain-source on-state resistance (Rds), Ohm: 0.4
Package: TO-3P
N-FET 140V 8A 100W TO-3P
Type Designator: 2SK413
Type of 2SK413 transistor: MOSFET
Type of control channel: N -Channel
Maximum power dissipation (Pd), W: 100
Maximum drain-source voltage |Uds|, V: 140
Maximum gate-source voltage |Ugs|, V: 20
Maximum drain current |Id|, A: 8
Maximum junction temperature (Tj), °C: 150
Rise Time of 2SK413 transistor (tr), nS: 35
Drain-source Capacitance (Cd), pF: 330
Maximum drain-source on-state resistance (Rds), Ohm: 0.4
Package: TO-3P