N-FET 450V 10A 120W TO-3PBL
Type Designator: 2SK386
Type of 2SK386 transistor: MOSFET
Type of control channel: N -Channel
Maximum power dissipation (Pd), W: 120
Maximum drain-source voltage |Uds|, V: 450
Maximum gate-source voltage |Ugs|, V: 20
Maximum drain current |Id|, A: 10
Maximum junction temperature (Tj), °C: 150
Rise Time of 2SK386 transistor (tr), nS: 50
Drain-source Capacitance (Cd), pF: 400
Maximum drain-source on-state resistance (Rds), Ohm: 0.5
Package: TO-3PBL
N-FET 450V 10A 120W TO-3PBL
Type Designator: 2SK386
Type of 2SK386 transistor: MOSFET
Type of control channel: N -Channel
Maximum power dissipation (Pd), W: 120
Maximum drain-source voltage |Uds|, V: 450
Maximum gate-source voltage |Ugs|, V: 20
Maximum drain current |Id|, A: 10
Maximum junction temperature (Tj), °C: 150
Rise Time of 2SK386 transistor (tr), nS: 50
Drain-source Capacitance (Cd), pF: 400
Maximum drain-source on-state resistance (Rds), Ohm: 0.5
Package: TO-3PBL