N-FET 18V, 0,01A, 0,15W SOT-23
Type Designator: 2SK211
Type of 2SK211 transistor: JFET
Type of control channel: N -Channel
Maximum power dissipation (Pd), W: 0.15
Maximum drain-source voltage |Uds|, V:
Maximum gate-source voltage |Ugs|, V:
Maximum drain current |Id|, A: 0.01
Maximum junction temperature (Tj), °C:
Rise Time of 2SK211 transistor (tr), nS:
Drain-source Capacitance (Cd), pF:
Maximum drain-source on-state resistance (Rds), Ohm:
Package: SMini(2.9x.2.5)
N-FET 18V, 0,01A, 0,15W SOT-23
Type Designator: 2SK211
Type of 2SK211 transistor: JFET
Type of control channel: N -Channel
Maximum power dissipation (Pd), W: 0.15
Maximum drain-source voltage |Uds|, V:
Maximum gate-source voltage |Ugs|, V:
Maximum drain current |Id|, A: 0.01
Maximum junction temperature (Tj), °C:
Rise Time of 2SK211 transistor (tr), nS:
Drain-source Capacitance (Cd), pF:
Maximum drain-source on-state resistance (Rds), Ohm:
Package: SMini(2.9x.2.5)