P-FET 140V 8A 100W TO-3P
Type Designator: 2SJ118
Type of 2SJ118 transistor: MOSFET
Type of control channel: P -Channel
Maximum power dissipation (Pd), W: 100
Maximum drain-source voltage |Uds|, V: 140
Maximum gate-source voltage |Ugs|, V: 20
Maximum drain current |Id|, A: 8
Maximum junction temperature (Tj), °C: 150
Rise Time of 2SJ118 transistor (tr), nS: 50
Drain-source Capacitance (Cd), pF: 450
Maximum drain-source on-state resistance (Rds), Ohm: 0.4
Package: TO-3P
P-FET 140V 8A 100W TO-3P
Type Designator: 2SJ118
Type of 2SJ118 transistor: MOSFET
Type of control channel: P -Channel
Maximum power dissipation (Pd), W: 100
Maximum drain-source voltage |Uds|, V: 140
Maximum gate-source voltage |Ugs|, V: 20
Maximum drain current |Id|, A: 8
Maximum junction temperature (Tj), °C: 150
Rise Time of 2SJ118 transistor (tr), nS: 50
Drain-source Capacitance (Cd), pF: 450
Maximum drain-source on-state resistance (Rds), Ohm: 0.4
Package: TO-3P