SI-N 1500/600V 10A 50W TO-3PBL
Type Designator: 2SD2500
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 50
Maximum collector-base voltage |Ucb|, V: 1500
Maximum collector-emitter voltage |Uce|, V: 600
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 10
Maximum junction temperature (Tj), °C:
Transition frequency (ft), MHz: 1.7
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 10
Noise Figure, dB: -
Package of 2SD2500 transistor: TO-3PBL
SI-N 1500/600V 10A 50W TO-3PBL
Type Designator: 2SD2500
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 50
Maximum collector-base voltage |Ucb|, V: 1500
Maximum collector-emitter voltage |Uce|, V: 600
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 10
Maximum junction temperature (Tj), °C:
Transition frequency (ft), MHz: 1.7
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 10
Noise Figure, dB: -
Package of 2SD2500 transistor: TO-3PBL