SI-N 150V 9A 100W 20MHz TO-3PBL
Type Designator: 2SD2052
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 100
Maximum collector-base voltage |Ucb|, V: 150
Maximum collector-emitter voltage |Uce|, V: 0
Maximum emitter-base voltage |Ueb|, V: 0
Maximum collector current |Ic max|, A: 9
Maximum junction temperature (Tj), °C: 150
Transition frequency (ft), MHz:
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 30
Noise Figure, dB: -
Package of 2SD2052 transistor: TO-3PBL
SI-N 150V 9A 100W 20MHz TO-3PBL
Type Designator: 2SD2052
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 100
Maximum collector-base voltage |Ucb|, V: 150
Maximum collector-emitter voltage |Uce|, V: 0
Maximum emitter-base voltage |Ueb|, V: 0
Maximum collector current |Ic max|, A: 9
Maximum junction temperature (Tj), °C: 150
Transition frequency (ft), MHz:
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 30
Noise Figure, dB: -
Package of 2SD2052 transistor: TO-3PBL