SI-N 25V 0.5A 0.6W 200MHz SOT-33
Type Designator: 2SD1996
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 0.6
Maximum collector-base voltage |Ucb|, V: 25
Maximum collector-emitter voltage |Uce|, V: 0
Maximum emitter-base voltage |Ueb|, V: 0
Maximum collector current |Ic max|, A: 0.5
Maximum junction temperature (Tj), °C: 150
Transition frequency (ft), MHz:
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 500
Noise Figure, dB: -
Package of 2SD1996 transistor: SOT33
SI-N 25V 0.5A 0.6W 200MHz SOT-33
Type Designator: 2SD1996
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 0.6
Maximum collector-base voltage |Ucb|, V: 25
Maximum collector-emitter voltage |Uce|, V: 0
Maximum emitter-base voltage |Ueb|, V: 0
Maximum collector current |Ic max|, A: 0.5
Maximum junction temperature (Tj), °C: 150
Transition frequency (ft), MHz:
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 500
Noise Figure, dB: -
Package of 2SD1996 transistor: SOT33