SI-N 60V 1A 0,6W 200MHz SOT-33
Type Designator: 2SD1994AR
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 0.6
Maximum collector-base voltage |Ucb|, V: 30
Maximum collector-emitter voltage |Uce|, V: 0
Maximum emitter-base voltage |Ueb|, V: 0
Maximum collector current |Ic max|, A: 1
Maximum junction temperature (Tj), °C: 150
Transition frequency (ft), MHz:
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 40
Noise Figure, dB: -
Package of 2SD1994 transistor: SOT33
SI-N 60V 1A 0,6W 200MHz SOT-33
Type Designator: 2SD1994AR
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 0.6
Maximum collector-base voltage |Ucb|, V: 30
Maximum collector-emitter voltage |Uce|, V: 0
Maximum emitter-base voltage |Ueb|, V: 0
Maximum collector current |Ic max|, A: 1
Maximum junction temperature (Tj), °C: 150
Transition frequency (ft), MHz:
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 40
Noise Figure, dB: -
Package of 2SD1994 transistor: SOT33