SI-N 40V 4A 15W 150MHz TO-251
Type Designator: 2SD1806
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 15
Maximum collector-base voltage |Ucb|, V: 40
Maximum collector-emitter voltage |Uce|, V: 30
Maximum emitter-base voltage |Ueb|, V: 6
Maximum collector current |Ic max|, A: 4
Maximum junction temperature (Tj), °C: 150
Transition frequency (ft), MHz: 150
Collector capacitance (Cc), pF: 40
Forward current transfer ratio (hFE), min: 50
Noise Figure, dB: -
Package of 2SD1806 transistor: TO251
SI-N 40V 4A 15W 150MHz TO-251
Type Designator: 2SD1806
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 15
Maximum collector-base voltage |Ucb|, V: 40
Maximum collector-emitter voltage |Uce|, V: 30
Maximum emitter-base voltage |Ueb|, V: 6
Maximum collector current |Ic max|, A: 4
Maximum junction temperature (Tj), °C: 150
Transition frequency (ft), MHz: 150
Collector capacitance (Cc), pF: 40
Forward current transfer ratio (hFE), min: 50
Noise Figure, dB: -
Package of 2SD1806 transistor: TO251