SI-N 130/80V 20A 100W TO-3PBL
Type Designator: 2SD1707
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 100
Maximum collector-base voltage |Ucb|, V: 130
Maximum collector-emitter voltage |Uce|, V: 80
Maximum emitter-base voltage |Ueb|, V: 0
Maximum collector current |Ic max|, A: 20
Maximum junction temperature (Tj), °C: 150
Transition frequency (ft), MHz:
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 40
Noise Figure, dB: -
Package of 2SD1707 transistor: TO-3PBL
SI-N 130/80V 20A 100W TO-3PBL
Type Designator: 2SD1707
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 100
Maximum collector-base voltage |Ucb|, V: 130
Maximum collector-emitter voltage |Uce|, V: 80
Maximum emitter-base voltage |Ueb|, V: 0
Maximum collector current |Ic max|, A: 20
Maximum junction temperature (Tj), °C: 150
Transition frequency (ft), MHz:
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 40
Noise Figure, dB: -
Package of 2SD1707 transistor: TO-3PBL