SI-N 100V 7A 30W 10MHz TO-220F
Type Designator: 2SD1411-Y
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 30
Maximum collector-base voltage |Ucb|, V: 100
Maximum collector-emitter voltage |Uce|, V: 80
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 7
Maximum junction temperature (Tj), °C: 150
Transition frequency (ft), MHz: 10
Collector capacitance (Cc), pF: 250
Forward current transfer ratio (hFE), min: 120
Noise Figure, dB: -
Package of 2SD1411-Y transistor: TO-220F
SI-N 100V 7A 30W 10MHz TO-220F
Type Designator: 2SD1411-Y
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 30
Maximum collector-base voltage |Ucb|, V: 100
Maximum collector-emitter voltage |Uce|, V: 80
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 7
Maximum junction temperature (Tj), °C: 150
Transition frequency (ft), MHz: 10
Collector capacitance (Cc), pF: 250
Forward current transfer ratio (hFE), min: 120
Noise Figure, dB: -
Package of 2SD1411-Y transistor: TO-220F