SI-N 1500/800V 5A 120W TO-3P
Type Designator: 2SD1402
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 120
Maximum collector-base voltage |Ucb|, V: 1500
Maximum collector-emitter voltage |Uce|, V: 800
Maximum emitter-base voltage |Ueb|, V: 7
Maximum collector current |Ic max|, A: 5
Maximum junction temperature (Tj), °C: 150
Transition frequency (ft), MHz: 3
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 8
Noise Figure, dB: -
Package of 2SD1402 transistor: TO-3P
SI-N 1500/800V 5A 120W TO-3P
Type Designator: 2SD1402
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 120
Maximum collector-base voltage |Ucb|, V: 1500
Maximum collector-emitter voltage |Uce|, V: 800
Maximum emitter-base voltage |Ueb|, V: 7
Maximum collector current |Ic max|, A: 5
Maximum junction temperature (Tj), °C: 150
Transition frequency (ft), MHz: 3
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 8
Noise Figure, dB: -
Package of 2SD1402 transistor: TO-3P