SI-N 100V 1,5A 5W TO-39
Type Designator: 2N1480
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 5
Maximum collector-base voltage |Ucb|, V: 100
Maximum collector-emitter voltage |Uce|, V: 55
Maximum emitter-base voltage |Ueb|, V: 12
Maximum collector current |Ic max|, A: 1.5
Maximum junction temperature (Tj), °C: 200
Transition frequency (ft), MHz: 1
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 20
Noise Figure, dB: -
Package of 2N1480 transistor: TO39
SI-N 100V 1,5A 5W TO-39
Type Designator: 2N1480
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 5
Maximum collector-base voltage |Ucb|, V: 100
Maximum collector-emitter voltage |Uce|, V: 55
Maximum emitter-base voltage |Ueb|, V: 12
Maximum collector current |Ic max|, A: 1.5
Maximum junction temperature (Tj), °C: 200
Transition frequency (ft), MHz: 1
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 20
Noise Figure, dB: -
Package of 2N1480 transistor: TO39