SI-N 1400V 10A 50W TO-3
Type Designator: 2SD1279
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 50
Maximum collector-base voltage |Ucb|, V: 1400
Maximum collector-emitter voltage |Uce|, V: 600
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 10
Maximum junction temperature (Tj), °C: 150
Transition frequency (ft), MHz: 3
Collector capacitance (Cc), pF: 165
Forward current transfer ratio (hFE), min: 8
Noise Figure, dB: -
Package of 2SD1279 transistor: TO3
SI-N 1400V 10A 50W TO-3
Type Designator: 2SD1279
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 50
Maximum collector-base voltage |Ucb|, V: 1400
Maximum collector-emitter voltage |Uce|, V: 600
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 10
Maximum junction temperature (Tj), °C: 150
Transition frequency (ft), MHz: 3
Collector capacitance (Cc), pF: 165
Forward current transfer ratio (hFE), min: 8
Noise Figure, dB: -
Package of 2SD1279 transistor: TO3