SI-N 100V 4A 1W TO-251
Type Designator: 2SD1223
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 1
Maximum collector-base voltage |Ucb|, V: 100
Maximum collector-emitter voltage |Uce|, V: 80
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 4
Maximum junction temperature (Tj), °C: 150
Transition frequency (ft), MHz:
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 4000
Noise Figure, dB: -
Package of 2SD1223 transistor: TO251
SI-N 100V 4A 1W TO-251
Type Designator: 2SD1223
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 1
Maximum collector-base voltage |Ucb|, V: 100
Maximum collector-emitter voltage |Uce|, V: 80
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 4
Maximum junction temperature (Tj), °C: 150
Transition frequency (ft), MHz:
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 4000
Noise Figure, dB: -
Package of 2SD1223 transistor: TO251