SI-N 120V 0,5A 1W TO-92
Type Designator: 2SD1211
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 1
Maximum collector-base voltage |Ucb|, V: 120
Maximum collector-emitter voltage |Uce|, V: 0
Maximum emitter-base voltage |Ueb|, V: 0
Maximum collector current |Ic max|, A: 0.5
Maximum junction temperature (Tj), °C: 150
Transition frequency (ft), MHz: 200
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 80
Noise Figure, dB: -
Package of 2SD1211 transistor: TO92
SI-N 120V 0,5A 1W TO-92
Type Designator: 2SD1211
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 1
Maximum collector-base voltage |Ucb|, V: 120
Maximum collector-emitter voltage |Uce|, V: 0
Maximum emitter-base voltage |Ueb|, V: 0
Maximum collector current |Ic max|, A: 0.5
Maximum junction temperature (Tj), °C: 150
Transition frequency (ft), MHz: 200
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 80
Noise Figure, dB: -
Package of 2SD1211 transistor: TO92