SI-N 110V 5A 35W 20MHz TO-220
Type Designator: 2SD1195
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 35
Maximum collector-base voltage |Ucb|, V: 110
Maximum collector-emitter voltage |Uce|, V: 100
Maximum emitter-base voltage |Ueb|, V: 6
Maximum collector current |Ic max|, A: 5
Maximum junction temperature (Tj), °C: 150
Transition frequency (ft), MHz: 20
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 2000
Noise Figure, dB: -
Package of 2SD1195 transistor: TO220
SI-N 110V 5A 35W 20MHz TO-220
Type Designator: 2SD1195
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 35
Maximum collector-base voltage |Ucb|, V: 110
Maximum collector-emitter voltage |Uce|, V: 100
Maximum emitter-base voltage |Ueb|, V: 6
Maximum collector current |Ic max|, A: 5
Maximum junction temperature (Tj), °C: 150
Transition frequency (ft), MHz: 20
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 2000
Noise Figure, dB: -
Package of 2SD1195 transistor: TO220