SI-N 140V 10A 100W TO-3P
Type Designator: 2SD1148-O
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 100
Maximum collector-base voltage |Ucb|, V: 140
Maximum collector-emitter voltage |Uce|, V: 140
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 10
Maximum junction temperature (Tj), °C: 150
Transition frequency (ft), MHz: 20
Collector capacitance (Cc), pF: 200
Forward current transfer ratio (hFE), min: 80
Noise Figure, dB: -
Package of 2SD1148-O transistor: TO--3P
SI-N 140V 10A 100W TO-3P
Type Designator: 2SD1148-O
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 100
Maximum collector-base voltage |Ucb|, V: 140
Maximum collector-emitter voltage |Uce|, V: 140
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 10
Maximum junction temperature (Tj), °C: 150
Transition frequency (ft), MHz: 20
Collector capacitance (Cc), pF: 200
Forward current transfer ratio (hFE), min: 80
Noise Figure, dB: -
Package of 2SD1148-O transistor: TO--3P